Photoluminescence and Boosting Electron–Phonon Coupling in CdS Nanowires with Variable Sn(IV) Dopant Concentration

Abstract High-quality Sn(IV)-doped CdS nanowires were synthesized by a thermal evaporation route. Both XRD and Raman scattering spectrum confirmed the doping effect. The room temperature photoluminescence (PL) demonstrated that both near bandgap emission discrete trapped-state appeared simultaneously significantly, which attributed to strong exciton trapping impurities electron–phonon coupling during light transportation. PL intensity ratio of could be tune via doped Sn(IV) concentration in nanowires. It is interesting shows well separated peaks with assistance 1LO, 2LO, 4LO phonons, demonstrating boosting these influence dopant further revealed lifetime decay profile. optical micro-cavity also plays an important role on this process. Our results will helpful understanding modulated carrier interaction, recombination one-dimensional (1D) nanostructures.